集成门极换向晶闸管开关特性  

Switching Characteristics of Integrated Gate Commutated Thyristors

作　　者：兰志明[1] 李崇坚[1] 绳伟辉[1] 王成胜[2] 朱春毅[1] 

机构地区：[1]冶金自动化研究设计院,北京100071 [2]中国科学院电工研究所,北京100080

出　　处：《电工技术学报》2007年第7期93-97,共5页Transactions of China Electrotechnical Society

摘　　要：新型开关器件集成门极换向晶闸管(IGCT)由于其优越的性能在中高压大功率多电平变流器系统中逐渐得到广泛应用。在电力电子仿真软件PSIM中实现的一种适用于高压大功率变流仿真的IGCT功能模型的基础上,建立了IGCT单管实验的仿真模型,分析了IGCT开关特性,特别是该电路中各种杂散参数和缓冲吸收电路中各元件参数对IGCT关断过程的影响,为实际的基于IGCT器件的大功率多电平变流器系统的结构设计和控制提供了重要的理论根据和指导。In media and high voltage large power multi-level converter systems, integrated gate commutated thyristors （IGCT） are widely used due to its outstanding performance. In this paper, based on a functional model of IGCT that realized with the simulation tool of PSIM package, one IGCT test circuit model with PSIM package is built to investigate the IGCT switching characteristics, especially the effect of the stray inductance and snubber circuit on the IGCT turn-off switching characteristics. Thus it can present important theoretic direction on the structure design and the control method of the large power multi-level converter system that based IGCT device.

关 键 词：IGCT 功能模型 PSIM 杂散电感 缓冲吸收电路 

分 类 号：TM215.4[一般工业技术—材料科学与工程]