基底沉积温度对WO_3薄膜电致变色特性的影响  

Influence of Deposition Temperature Upon Electrochromic Property of WO_3 Films

作　　者：张金伟[1] 刁训刚[1] 王怀义[1] 黄俊[1] 舒远杰[2] 

机构地区：[1]北京航空航天大学,北京100083 [2]中国工程物理研究院化工材料研究所,绵阳621900

出　　处：《宇航材料工艺》2007年第5期43-45,共3页Aerospace Materials & Technology

基　　金：国家自然科学基金重点项目(90305026);中国工程物理研究院双百人才基金(2005R0504)

摘　　要：分别在室温和基片温度低于223 K的条件下,采用直流反应磁控溅射法制备WO3薄膜。对两种条件下制备的薄膜晶体结构、透射光谱特性及电致变色性能进行对比分析。结果表明,低温沉积有利于WO3薄膜非晶化,使得Li^＋的抽取更加容易,进而显示出良好的变色性能。低温制备的WO3薄膜在可见光400-800nm范围内着色态和漂白态平均透光率差值达70%以上,在690 nm处的着色系数达到了48.7 cm^2/C,具有良好的变色效率。WO3 electrochromic films are deposited by DC reactive magnetron sputtering at room temperature and low temperature （ 〈 223 K） respectively. The structure, transmittance and electrochromic performance of the two samples are compared. Results reveal that the WO3 films deposited at low temperature are amorphous that are beneficial for Li ^＋ to inject and eject. The average transmittance variation of WO3 film deposited at low temperature between bleached and colored state can reach 70% at 400 - 800 nm and the coloration efficiency reaches 48.7 cm^2/C at 690 nm.

关 键 词：低温 三氧化钨 电致变色 非晶态 

分 类 号：O484[理学—固体物理]