质子辐射下GaAs/Ge太阳电池的性能退化  

Property degradation of GaAs/Ge solar cell at proton irradiation

作　　者：赵慧杰[1] 肖景东[1] 吕伟[2] 孙彦铮[2] 张益君[1] 何世禹[1] 

机构地区：[1]哈尔滨工业大学,黑龙江哈尔滨150001 [2]中国电子科技集团公司第十八研究所,天津300381

出　　处：《电源技术》2007年第10期819-822,共4页Chinese Journal of Power Sources

基　　金：国家重点基础研究发展规划项目(G200551343)

摘　　要：对GaAs/Ge太阳电池进行了质子辐射实验。质子辐射的能量为70～170keV,辐射的剂量为1×109～3×1012cm-2。研究结果表明,GaAs/Ge太阳电池具有一定的抗辐射性能;能量小于200keV的质子辐射中,质子辐射能量相同条件下,随辐射剂量的增加,电池性能参数短路电流Isc、开路电压Uoc、最大功率Pm和填充因子FF衰降增大;质子辐射剂量相同条件下,辐射能量越高,太阳电池性能衰降越大;在所有测试参数中,最大功率Pm的退化最为明显。The low-energy proton irradiation effects on GaAs/Ge solar cell for space application were studied, The cells were irradiated by protons with an energy of 70 - 170 keV up to a fluence ranging from 1× 10^9 to 3 × 10^12cm^-2, and then the change of the photovoltaic performances was measured at AM0. The results show that the GaAs/Ge solar cell has a favorable radiation-resistance investigated at the same irradiation energy of protons lower than 200 keV, the electric properties such as the short circuit current （/sc）,the open circuit voltage （Uoc） ,the maximum power （Pm） and the filling factor （FF） of the GaAs/Ge solar cells decrease with the increasing of the proton fluence damage extent of proton radiation increases with the increasing of the irradiation energy of proton under a given of fluence, Among all the evaluated parameters, the maximum power （Pm） degrades more remarkably.

关 键 词：GAAS/GE太阳电池 质子辐射 性能退化 

分 类 号：TM914.4[电气工程—电力电子与电力传动]