碳化硅功率器件及其应用的最新研发进展  

The Recent Developmental Progress on SiC Power Devices and Its Applications

作　　者：刘鹿生[1] 

机构地区：[1]<电力电子>编辑部

出　　处：《电力电子》2007年第4期5-12,共8页Power Electronics

摘　　要：本文基于最近几年发现的新效应和创新设计,综合评述了4H-SiC功率器件:MOSFET、IGBT、SiCGT和PiN二极管的最新研发进展,包括研发过程遇到的主要技术难题,器件特性和初步应用。实验初步验证,SiC功率器件具有高效节能和实现高功率密度的能力。The recent development of 4H-SiC power devices, such as MOSFET, IGBT, SiCGT and PiN diode are reviewed based on new effects and design, including technology challenge, devices characteristics and preliminary applications. Experimental test is shown that the SiC power devices have energy save advantage and high power density capability.

关 键 词：退化 界面性质(态) 节能 功率密度 

分 类 号：TN386.4[电子电信—物理电子学]