n-ZnO/p-Si紫外至近红外增强型广谱光探测器  

Preparation of Ultraviolet-visible-enhanced Photodetector Employing n-ZnO/p-Si Structure

作　　者：朱慧群[1] 丁瑞钦[1] 庞锐[2] 麦开强[2] 吴劲辉[2] 

机构地区：[1]五邑大学薄膜与纳米材料研究所 [2]五邑大学信息学院,广东江门529020

出　　处：《光电子．激光》2007年第10期1173-1175,共3页Journal of Optoelectronics·Laser

基　　金：广东省自然科学基金资助项目(04011770);广东省江门市科技计划资助项目(2004.59)

摘　　要：采用直流反应溅射法，在一定的溅射功率和衬底温度等条件下控制气体组分，优选Ar：O2—8：1成功研制出高响应度n-ZnO／p-Si紫外至近红外增强型广谱光探测器。实验关键是利用缺O法在n-ZnO薄膜内有效引入O缺位Vo，而Vo可增强紫蓝波段的光响应。测试结果显示，ZnO薄膜的光致发光（PL）谱除在388nm处存在紫外带边发射主峰外，还在416nm处出现由O缺位导致的发射峰；X射线衍射（XRD）谱表明，薄膜中的晶体为高C轴取向的纤锌矿结构；n-ZnO／p-Si光探测器在光照时Ⅰ-Ⅴ特性显示，光电流随反向偏压的增加迅速上升；在5V的反向偏压下，紫外区（310-388nm）的光响应高达0．75～1．38A／W，紫蓝光区（400-430nm）的光响应大大增强，400-800nm波段的光谱响应稳定在0．90A／W。Ultraviolet-visible-enhanced n-ZnO/p-Si photodetector with high responsivity has been successfully fabricated by DC reactive sputtering at constant sputtering power and substrate temperature and a serial controllable gas-flowing-ratio of Ar to O2 ,and the ratio of 8 ： 1 was optimized. The oxygen vacancies Vo were introduced to the n-ZnO films intentionally with oxygen-lacking method,and Vo can enhance the responsivity of our photodetector in 388-430 nm. The measured resuits indicated that the photoluminescence spectrum exhibited a strong band edge emission peak at 388 nm and an emission peak at 416 nm resulting from the oxygen vacancies in the ZnO film. X-ray pattern showed that crystals in the films were highly c-axis orinted wurtzite.Ⅰ-Ⅴ characteristic of the detector showed that photoelectron current increased rapidly with the increase of reverse-bias voltage. The spectral respnsitivity under the reverse bias of 5 V strengthened greatly in 400-430 nm,and arrived at 0.75-1.38 A/W in 310-388 nm,and then kept at 0. 9 A/W in 400-800 nm.

关 键 词：直流反应溅射 n-ZnO/p-Si异质结 光探测器 光响应 

分 类 号：TN366[电子电信—物理电子学]