Optimization of gallium nitride-based laser diode through transverse modes analysis  

作　　者：Xiaomin Jin 章蓓 Liang Chen 代涛 张国义 

机构地区：[1]Electrical Engineering Department, California Polytechnic State University, San Luis Obispo, CA 93407, USA [2]School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871 [3]RSoft Design Group, Inc., 400 Executive Boulevard, Suite 100, Ossining, NY 10562, USA

出　　处：《Chinese Optics Letters》2007年第10期588-590,共3页中国光学快报（英文版）

基　　金：supported by the"973"Program of China(No.TG2007CB307004);the"863"Program of China(No.863-2006AA03A113);the National Natural Science Foundation of China(No.60276034,60577030,and 60607003).

摘　　要：We investigate the transverse mode pattern in GaN quantum-well （QW） laser diode （LD） by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.We investigate the transverse mode pattern in GaN quantum-well （QW） laser diode （LD） by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.

关 键 词：Gallium nitride Laser modes OPTIMIZATION Semiconductor quantum wells 

分 类 号：TN31[电子电信—物理电子学]