ZnO纳米锥光致发光性及印刷ZnO纳米锥场发射性能研究  

Photoluminescence characteristics of ZnO nanowires and the field emission properties of screen printing ZnO nanowires

作　　者：于灵敏[1] 朱长纯[1] 商世广[1] 潘金艳[1] 

机构地区：[1]西安交通大学电子与信息工程学院

出　　处：《功能材料》2007年第10期1569-1571,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60036010;60476037);国家高技术研究发展计划(863计划)重点资助项目(2001AA313090)

摘　　要：利用物理热蒸发法制备大规模的蒲公英状的ZnO纳米锥,利用荧光光谱仪对ZnO纳米锥进行了光致发光性能测试。针对现有的丝网印刷碳纳米管(CNTs)薄膜需要各种后处理工艺后才能改善其场发射特性的问题,提出了一种不需任何后处理丝网印刷ZnO纳米锥的浆料配制工艺。用该工艺制备的丝网印刷ZnO纳米锥的场发射特性测试表明,ZnO纳米锥与制浆剂质量比为3∶5的薄膜的开启场强最低为2.25V/μm(电流密度为1μA/cm2),在4.6V/μm场强下,阳极荧光粉的发光点亮度高且分布均匀。说明该方法成本低,工艺简单,无需任何后处理,在ZnO纳米锥场发射显示器的制作中有很好的实际应用价值。large scale dandelion-like ZnO nanotapers have been prepared by thermal evaporation and its roomtemperature photoluminescence （PL） has been tested. In this paper, a novel formula slurry process with noth- ing post-treatment for screen printing ZnO nanowires was presented. The field emission measurement revealed that the ZnO nanowires film prepared by this process have the lowest turn-on field 2.25V/μm at the current density of 1μ/cm^2. From the anode luminance point, it is obvious that the ZnO nanowires could emit uniform distribution and great density of luminance point at the applied field of 4.6V/μm. The results indicate that this method has the advantages of low cost and simple process with nothing post-treatment, which applies a better utility value in the fabrication of ZnO nanowires field emission display.

关 键 词：ZnO纳米锥 光致发光 场发射 印刷 

分 类 号：TN383.2[电子电信—物理电子学] TN873