低温高压条件下裂解聚吡咙薄膜导电性的初步研究  

PRIMARY RESEARCH OF ELECTRICAL PROPERTY OF PYROLYZED POLYPYRROLONE FILM UNDER LOW TEMPERATURE AND HIGH PRESSURE

作　　者：刘振兴[1] 张殿琳[1] 朴明俊[2] 万梅香[2] 卢凤才[2] 

机构地区：[1]中国科学院物理研究所 [2]中国科学院化学研究所

出　　处：《高压物理学报》1997年第1期1-7,共7页Chinese Journal of High Pressure Physics

基　　金：国家自然科学基金;中国科学院有机固体开放实验室资助

摘　　要：通过对裂解聚吡咙（ＰＭＤＡ－ＤＡＢ）薄膜导电性环境温度、裂解温度及压力关系的研究表明：其室温导电率随所加压力与裂解温度的升高而增加。电导与温度的依赖行为有赖于裂解温度Ｔｐ及所加的压力在Ｔｐ＜８００℃时，碳化过程产物能符合三维变程跃迁模型；而在Ｔｐ＞８００℃时，石墨化过程产物则比较符合修正的三维变程跃迁模型。最大的导电率是在裂解温度为１２００℃的裂解产物上在１．０５ＧＰａ压力下获得的，数值约１０００ｓ／ｃｍ。The temperature dependence of conductivity of polypyrrolone (PMDA DAB) film pyrolyzed at different pyrolytic temperatures was measured as a function of the applied pressure.The obtained results indicat that the room temperature conductivity increases with the increase of the applied pressure and pyrolytic temperature.The pressure dependence of conductivity can be expressed by improved extended Mott expression.For the carbonization process ( T p<800℃),the temperature dependence of conductivity can be expressed by the 3 Dimensional Variable Range Hopping (3D VRH) model.For the graphitization process ( T p>800℃),a modified 3D VRH model was fitted.

关 键 词：裂解温度 聚吡咙 薄膜 

分 类 号：O484.4[理学—固体物理] O631.23[理学—物理]