加偏置电场的双曲线量子阱中的光整流效应(英文)  

Optical Rectification in Electric-field Biased Hyperbolic Quantum Wells

作　　者：谭鹏[1] 郭康贤[2] 路洪[1] 

机构地区：[1]佛山科学技术学院理学院物理系,广东佛山528000 [2]广州大学理学院物理系,广州510405

出　　处：《光子学报》2007年第5期812-815,共4页Acta Photonica Sinica

基　　金：Supported by the Natural Science Foundation ofGuangdong Province under Grant NOZ02069

摘　　要：用量子力学中密度矩阵算符理论导出了加偏置电场的双曲线量子阱中光整流系数的解析表达式.并以典型的GaAs双曲线量子阱为例进行了数值计算。研究结果表明,该势阱中的光整流系数与势阱的形状和偏置电场的强度有关。通过调节势阱参量a以及外加偏置电场,在该势阱中可获得一个大的光整流系数.The optical rectification coefficient in electric-field biased hyperbolic quantum wells was studied. The analytic expression of optical rectification coefficient of this system is derived by means of density matrix approach and the iterative method. Finally, the numerical results were presented for a typical GaAs electric-field biased hyperbolic quantum wells. The results show that the optical rectification coefficient in this system is larger than that in bulk GaAs material and it will change with the change of the parameter a of the quantum well and the applied electric field F.

关 键 词：非线性光学 双曲线量子阱 密度矩阵方法 光整流效应 

分 类 号：O437[机械工程—光学工程]