PZT/LaNiO_3/MgO多层结构制备及性能研究  

Study on PZT /LaNiO_3/MgO Heterostructures and Its Properties

作　　者：张洪伟[1] 张树人[1] 黄文[1] 刘敬松[1] 杨成韬[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2007年第5期586-588,共3页Piezoelectrics & Acoustooptics

基　　金：国家重大基础研究基金资助项目(51310Z)

摘　　要：利用激光脉冲法在MgO衬底上沉积制备LaNiO3(LNO)薄膜作为底电极材料,其上利用射频磁控溅射制备了锆钛酸铅(PZT)铁电薄膜。试验分析了LaNiO3表面结构和形貌,采用快速退火法在不同温度下对样品进行了热处理,发现在500℃即得到(110)取向、晶化完全的PZT薄膜。在5 V测试电压下发现650℃下晶化的样品表现出非常优异的介电和铁电性能,介电常数(rε,)和损耗(tanδ)分别达570和0.05,漏电流在10-9A量级,电滞回线完全饱和且形状对称,剩余极化强度(Pr)和矫顽场(Ec)分别为35.8μC/cm2和76.3 kV/cm。Pb（Zr0.55 Ti0.45 ） 03 （PZT） and LaNiO3 （LNO） thin films have been deposited by RF magnetron sputtering and pulsed laser deposition on MgO substrates, respectively. Structural and surface morphologies of LNO layers, which were designed as bottom electrodes, were investigated. （110）-oriented PZT thin films were obtained at an annealing temperature as low as 500 ℃. The C-V and P-E curves were observed even at the low applied voltage of 5 V and the measurements showed that samples annealed at 650 ℃ exhibited good dielectric and ferroelectric properties. The leakage currents was retained at 10^-9 A, and the measured εr, tan δ, Pr and Ec were 570, 0. 05, 35.8 ℃/cm^2 and 76.3 kV/cm, respectively.

关 键 词：LANIO3 锆钛酸铅(PZT) 激光脉冲沉积 射频磁控溅射 退火 

分 类 号：TM22[一般工业技术—材料科学与工程]