纳米二氧化硅表面改性及辐射引发接枝GMA的研究  

The study of grafting with GMA on the modified surface of SiO_2 nano particles

作　　者：孙贵生[1] 俎建华[1] 刘新文[1] 童龙[1] 

机构地区：[1]上海大学射线应用研究所,上海201800

出　　处：《辐射研究与辐射工艺学报》2007年第5期275-278,共4页Journal of Radiation Research and Radiation Processing

基　　金：国家自然科学基金(50303009)资助

摘　　要：利用偶联剂对纳米二氧化硅进行表面化学改性,制备了乙烯基活化的纳米二氧化硅。随后运用γ射线引发共辐照接枝的方法在改性纳米二氧化硅上接枝甲基丙烯酸缩水甘油酯(Glycidyl methacrylate,GMA)单体,研究了单体浓度,辐照剂量等因素对接枝率的影响规律,明确了反应条件与接枝率的对应关系,并采用傅立叶变换红外光谱(Fourier transform infrared spectroscopy,FT-IR)、综合热分析仪(Simultaneous thermal analysis,TGA)、透射电镜(Transmission Electron Microscope,TEM)等手段对改性纳米二氧化硅的组成和结构进行了表征。The surface of nano silicon dioxide was modified by silane coupling agentto produce vinyl. Then glycidyl methacrylate （GMA） monomer was grafted to modified nano silicon dioxide by use of γ-irradiation. Effects of monomer concentration and irradiation dose on the grafting yield were studied. It was found that for simultaneous irradiation method, the reaction conditions had a complex effect on grafting yield. Fourier Transform Infrared Spectroscopy（PT-IR）, Simultaneous Thermal Analysis （TGA）, Transmission Electron Microscope （TEM） had been characterized the composition and structure of grafted nano silicon dioxide.

关 键 词：纳米二氧化硅 辐射接枝 甲基丙烯酸缩水甘油酯 

分 类 号：TQ316.66[化学工程—高聚物工业] O644.2[理学—物理化学]