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作 者:徐庆君[1]
机构地区:[1]枣庄学院物理与电子工程系,山东枣庄277160
出 处:《枣庄学院学报》2007年第5期34-36,共3页Journal of Zaozhuang University
摘 要:研究了不同掺杂浓度的掺铟铌酸锂晶体的紫外光致吸收和浅能级缺陷对应的热激活能.实验结果表明,只有在掺铟量超过第一阈值的样品中,才出现明显的紫外光致吸收现象.并且紫外光致吸收所对应浅能级缺陷的中心是O-小极化子,其附近的负电中心主要是(InNb)2-.We studied the ultraviolet - light - induced absorption coefficient change and their temperature dependence of the dark decay dynamics in the congruent LiNbO3 crystals doped with In^3+ of different concentrations. The result shows that the ultraviolet - light - induced absorption phenomenon is obvious while the doping concentration of In3 + was above the first threshold. Furthermore, we believed that the ultraviolet - light - induced absorption changes were ascribed to the generation of the small polarons O- under the illumination of UV lights. And the surrounding nearby negatively charged defect centers are (InNb)^2-.
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