掺Bi_2O_3,B_2O_3,V_2O_5和B_2CuO_4对Sm(Mg_(1/2)Ti_(1/2))O_3性质及显微结构的影响  

Microwave Dielectric Properties and Microstructures of Sm(Mg_(1/2)Ti_(1/2))O_3 Ceramics Added with Bi_2O_3,B_2O_3,V_2O_5 and B_2CuO_4

作　　者：戴国圆[1] 黄泓锜[2] 陈文浚[3] 傅彦培[3] 

机构地区：[1]吴凤技术学院电机工程系 [2]吴凤技术学院光机电暨材料研究所 [3]东华大学材料科学与工程系

出　　处：《武汉理工大学学报》2007年第10期182-185,共4页Journal of Wuhan University of Technology

摘　　要：实验添加多种助烧结剂于以固态反应法制备的钐镁钛微波介电陶瓷Sm(Mg1/2Ti1/2)O3,并研究对烧结体的相对密度、相变化、介电常数、频率温度系数(TCF)、品质因子及微观结构性质的影响。尝试分别加入10 mol%的Bi2O3、B2O3、V2O5及B2CuO4可有效降低陶瓷孔隙率使其致密化,更可大幅下降块材烧结温度,使之可以顺利导入低温共烧陶瓷制程(Low-Temperature Co-fired Ceramics;LTCC),但会破坏钙钛矿晶体结构,引起材料微波特性降低。在实验中原料混合粉末以1 100℃煅烧2 h后研磨,再成型后以1 300℃烧结6 h。结果显示以添加Bi2O3具有最高的密度及Q×f与介电常数,达6.47 g/cm3和26 000 GHz及30.19。In this study, doping several different additives with 10 mol% in Sm（Mg1/2Ti1/2）O3 ceramics. The results reveal that the sintering temperature could be significant decreased by doping with sintering aids. Sm（Mg1/2Ti1/2 ）O3 ceramics doped with Bi2O3 can significantly improve the density and dielectric properties, but the temperature of resonant frequency was not significantly affected. The excellent didectric properties of the dielectric constant of 30. 19, a Q×f value of 26 000 GHz and density 6.47 g/cm^3 were obtained for Sm（Mg1/2Ti1/2）O3 ceramics doped with Bi2Q3 sintered at 1 300℃ for 6 h.

关 键 词：介电常数 微波特性 Sm(Mg1/2Ti1/2)O3 

分 类 号：TQ050.4[化学工程]