RTD的器件模型和模拟——共振隧穿器件讲座(9)  

Device Model and Device Simulation of RTD:Lecture of Resonant Tunneling Devices(9)

作　　者：郭维廉[1,2,3] 

机构地区：[1]天津工业大学信息与通讯工程学院 [2]专用集成电路国家级重点实验室,石家庄050051 [3]天津大学电子信息工程学院,天津300072

出　　处：《微纳电子技术》2007年第10期917-922,951,共7页Micronanoelectronic Technology

摘　　要：阐述了电路模拟在设计和研制大规模集成过程中的必要性和重要意义,器件模型在电路模拟中的重要性以及器件模拟与器件模型的关系;在器件模拟通用软件形成过程的基础上重点讨论了RTD的器件模型、器件模拟和电路模拟软件SPICE三个课题;介绍了基于物理参数I-V方程RTD模型和高斯函数、指数函数RTD直流模型;利用ATLAS器件模拟通用软件对RTD进行了器件模拟,得到了势垒和势阱宽度、E区掺杂浓度等对RTDI-V特性的影响;以包含RTD电路的SPICE电路模拟中的文字逻辑门为例,通过电路模拟验证了其逻辑功能,对设计该电路起到指导和参考作用。　The importance and necessity of circuit simulation for the design and development of VLSI or ULSI were discribed.The importance of device model in the circuit simulation,the relationship between device model and device simulation were illustrated.RTD device model,simulation and RTD circuit simulation software（SPICE）were discussed.The RTD model based on physics parameters I-V equations and Gauss function,as well as the device large-signal DC model for PSPICE were introduced.The device simulation software ATLAS was used for RTD device simulation,the effects of barrier width,well width and doping density in emitter on the RTD I-V characteristics were obtained.For SPICE circuit simulation of RTD circuit,the literal logic gate was used as an example for SPICE simulation.The results show that the RTD literal logic gate has the standard logic function of general literal logic gate,and the circuit simulation is helpful to the design on circuit involving RTD device.

关 键 词：器件模型 器件模拟 RTD电路 电路模拟 

分 类 号：TN312.2[电子电信—物理电子学]