共振隧穿三极管(RTT)———共振隧穿器件讲座(10)  

Resonant Tunneling Transistor(RTT):Lecture of Resonant Tunneling Devices(10)

作　　者：郭维廉[1,2,3] 

机构地区：[1]天津工业大学信息与通讯工程学院 [2]专用集成电路国家级重点实验室,石家庄050051 [3]天津大学电子信息工程学院,天津300072

出　　处：《微纳电子技术》2007年第10期923-932,968,共11页Micronanoelectronic Technology

摘　　要：在简述共振隧穿三极管(RTT)的特点、定义、分类的基础上,全面、系统地介绍了各种结构RTT的材料结构、器件结构、工作原理、制造工艺及器件性能参数等,对某些RTT还给出了其应用前景。由于RTT的器件结构种类繁多,其工作原理也存在差异。为了便于介绍,在栅型RTT中以Schottky栅RTT为重点,在复合型RTT中以发射极中含DBS的RTBT和RTD/HEMT型RTT为重点进行了较为详细的阐述。总之,栅型RTT结构比较简单,但增益和驱动能力较小;复合型RTT结构较复杂,但增益和驱动能力较大,而且易于和HBT或HEMT电路兼容。　Based on the definition,features and classification of RTT,the material structure,device structure,operating principle,processing technology,the performance and parameters of device etc were introduced completely and systematically.In addition the application prospect of some RTT was presented.For the variouos device structure and the different operating principle,the Schottky gate structure as the focal point device in gate RTT and the RTBT（their emitter including DBS）and RTD/HEMT type as the focal point devices in the compound type RTT were described in detail.In summary,gate RTT is simple in structure,but its gain and current driven ability is less,and compound RTT is complex in structure,but it has larger gain and current driven ability as well as compatibility to HBT or HEMT high speed circuits.

关 键 词：RTT 栅型RTT(GRTT) RTBT RTD/HEMT型RTT 

分 类 号：TN31[电子电信—物理电子学]