Effect of Chemicals on Chemical Mechanical Polishing of Glass Substrates  

作　　者：王良咏 张楷亮 宋志棠 封松林 

机构地区：[1]Laboratory of Nano Technology, Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]Graduate School of the Chinese Academy of Sciences, Beijing 100049

出　　处：《Chinese Physics Letters》2007年第1期259-261,共3页中国物理快报（英文版）

摘　　要：We investigate the effect of chemicals on chemical mechanical polishing （CMP） of glass substrates. Ceria slurry in an ultra-low concentration of 0.25 wt. % is used and characterized by scanning electron microscopy. Three typical molecules, i.e. acetic acid, citric acid and sodium acrylic polymer, are adopted to investigate the effect on CMP performance in terms of material removal rate （MRR） and surface quality. The addition of sodium acrylic polymer shows the highest MRR as well as the best surface by atomic force microscopy after CMP, while the addition of citric acid shows the worst performance. These results reveal a mechanism that a long-chain molecule without any branches rather than small molecules and common molecules with ramose abundant-electron groups is better for the dispersion of the slurry and thus better for the CMP process.We investigate the effect of chemicals on chemical mechanical polishing （CMP） of glass substrates. Ceria slurry in an ultra-low concentration of 0.25 wt. % is used and characterized by scanning electron microscopy. Three typical molecules, i.e. acetic acid, citric acid and sodium acrylic polymer, are adopted to investigate the effect on CMP performance in terms of material removal rate （MRR） and surface quality. The addition of sodium acrylic polymer shows the highest MRR as well as the best surface by atomic force microscopy after CMP, while the addition of citric acid shows the worst performance. These results reveal a mechanism that a long-chain molecule without any branches rather than small molecules and common molecules with ramose abundant-electron groups is better for the dispersion of the slurry and thus better for the CMP process.

分 类 号：O64[理学—物理化学]