Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes  

作　　者：朱彦旭 徐晨 韩军 沈光地 

机构地区：[1]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022

出　　处：《Chinese Physics Letters》2007年第1期268-270,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of Beijing under Grant No 4002003, and the National Basic Research Programme of China under Grant No 2006CB604902.

摘　　要：GaN-based light-emitting diodes （LEDs） with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay （20A）. An Ag （3000A） omni-directional reflector covers the p-type contact. The n-type contact is a Ti/AI planar film with a 10-μm-width Ti/AI stripe. The Ti/AI stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.GaN-based light-emitting diodes （LEDs） with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay （20A）. An Ag （3000A） omni-directional reflector covers the p-type contact. The n-type contact is a Ti/AI planar film with a 10-μm-width Ti/AI stripe. The Ti/AI stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.

分 类 号：O43[机械工程—光学工程]