Theoretical Study of Photoabsorption Spectra near Si 2p Edges of Silanes： to Determine Orientations of Adsorbed Silanes  

作　　者：张卫华 李家明 

机构地区：[1]Key Laboratory of Atomic and Molecular Nanosciences of Education Ministry, Department of Physics, Tsinghua University, Beijing 100084 [2]Department of Physics, Shanghai Key Laboratory for Laser Fabrication and Material Science, Shanghai Jiaotong University, Shanghai 200030

出　　处：《Chinese Physics Letters》2007年第3期687-690,共4页中国物理快报（英文版）

基　　金：Supported by the Ministry of Science and Technology and Ministry of Education of China, the Key Project of the Ministry of Education of China （No 306020）, the National Natural Science Foundation of China under Grant No 10574162, the National High-Tech ICF Committee in China, the National Basic Research Programme of China under Grant Nos 2001CB610508 and 2006CB921400, and the Yin-He Super-Computer Center, Institute of Applied Physics and Mathematics, Beijing, China.

摘　　要：In the frame work of quantum defect theory, photoabsorption spectra near Si 219 edges of silane have been studied. When silanes are adsorbed on a physical surface and excited by polarized x-ray photons, relative intensities of the spectra will be different from that of free molecules. Such features can be used to determine orientations of adsorbed silanes based on selection rules.In the frame work of quantum defect theory, photoabsorption spectra near Si 219 edges of silane have been studied. When silanes are adsorbed on a physical surface and excited by polarized x-ray photons, relative intensities of the spectra will be different from that of free molecules. Such features can be used to determine orientations of adsorbed silanes based on selection rules.

关 键 词：NEAR-THRESHOLD STRUCTURES QUANTUM-DEFECT THEORY CORE-EXCITED SILANE ENERGYREGION MOLECULAR-HYDROGEN GEOMETRY STATE 

分 类 号：O43[机械工程—光学工程]