Low Threshold Current Density Operation of Strain-Compensated Quantum Cascade Laser  

作　　者：邵烨 李路 刘俊歧 刘峰奇 王占国 

机构地区：[1]Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083

出　　处：《Chinese Physics Letters》2007年第3期717-720,共4页中国物理快报（英文版）

基　　金：Supported by the National Science Fund for Distinguished Young Scholars under Grant No 60525406, the National Basic Research Programme of China under Grant No 2006CB604903, and Key Project of the National Natural Science Foundation of China under Grant No 60136010.

摘　　要：We report the low threshold current density operation of strain-compensated In0.64 Ga0.36As/In0.3sAl0.62As quantum cascade lasers emitting near 4.94 μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57kA/cm^2 at 80 K is achieved/or an uncoated 20-μm-wide and 2.5-mm-long laser.We report the low threshold current density operation of strain-compensated In0.64 Ga0.36As/In0.3sAl0.62As quantum cascade lasers emitting near 4.94 μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57kA/cm^2 at 80 K is achieved/or an uncoated 20-μm-wide and 2.5-mm-long laser.

关 键 词：MU-M ROOM-TEMPERATURE 

分 类 号：O43[机械工程—光学工程]