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作 者:滕晓云 于威 杨丽华 郝秋燕 张丽 许贺菊 刘彩池 傅广生
机构地区:[1]School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130 [2]College of Physics Science and Technology, Hebei University, Baoding 071002
出 处:《Chinese Physics Letters》2007年第4期1073-1075,共3页中国物理快报(英文版)
基 金:Supported by the Natural Science Foundation of Hebei Province under Grant No E2006001006, and the Programme for New Century Excellent Talents at the University of the Ministry of Education of China.
摘 要:Zn1-xMnxO (x = O.Olq3.1) thin films with a Curie temperature above 300K are deposited on Al2O3 (0001) substrates by pulsed laser deposition. X-ray diffraction (XRD), ultraviolet (UV)-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device (SQUID). The results indicate that Mn doping introduces the incorporation of Mn^2+ ions into the ZnO host matrix and the insertion of Mn^2+ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films.Zn1-xMnxO (x = O.Olq3.1) thin films with a Curie temperature above 300K are deposited on Al2O3 (0001) substrates by pulsed laser deposition. X-ray diffraction (XRD), ultraviolet (UV)-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device (SQUID). The results indicate that Mn doping introduces the incorporation of Mn^2+ ions into the ZnO host matrix and the insertion of Mn^2+ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films.
关 键 词:MN-DOPED ZNO MAGNETIC-PROPERTIES BULK
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