Spectral Hole-Burning of Eu^3＋：Y2SiO5 Crystal at 16 K  

作　　者：薛绍林 余木火 陈凌冰 赵有源 李富铭 张守都 王浩炳 

机构地区：[1]College of Sciences and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Donghua University, Shanghai 200051 [2]State Key Joint Lab for Material Modification by Triple Beams, Department of Optics, Fudan University, Shanghai 200433 [3]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800

出　　处：《Chinese Physics Letters》2007年第4期1080-1083,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 69807001 and 19834030.

摘　　要：By using an Ar^＋ ion laser, a tunable Rh 6G dye laser （linewidth 0.5cm^-1） pumped by the second harmonic of a YAG：Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3＋-doped Y2SiO5 crystal. Persistent ,spectral hole burning （PSHB） are observed in the Eu^3＋ ions spectral lines （^5 Do-T Fo transition） in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.By using an Ar^＋ ion laser, a tunable Rh 6G dye laser （linewidth 0.5cm^-1） pumped by the second harmonic of a YAG：Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3＋-doped Y2SiO5 crystal. Persistent ,spectral hole burning （PSHB） are observed in the Eu^3＋ ions spectral lines （^5 Do-T Fo transition） in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.

关 键 词：Y2SIO5 

分 类 号：O433.5[机械工程—光学工程]