Tunable Diode Laser Absorption Spectroscopy Detection of N2O at 2.1 μm Using Antimonide Laser and InGaAs Photodiode  

作　　者：张永刚 张晓钧 祝向荣 李爱珍 刘盛 

机构地区：[1]State Key Laboratory of Functional Materials for Informaties, Shanghai Institute of Mierosystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050

出　　处：《Chinese Physics Letters》2007年第8期2301-2303,共3页中国物理快报（英文版）

摘　　要：Tunable diode laser absorption spectroscopy detection of N2 0 around 2.1 μm is demonstrated by using a homemade InGaAsSb/AlGaAsSb MQW laser diode and an InGaAs wavelength extended photodiode. Details of the devices and the detection system are described. In the system, the laser is driven by low frequency pulses with long duration to form a wavelength scan around 4741 cm^-1; the absorption information is obtained from the detected signal of the photodiode. By using a gas cell with 15cm path length, a detection limit is estimated to be smaller than 0.2 Torr.Tunable diode laser absorption spectroscopy detection of N2 0 around 2.1 μm is demonstrated by using a homemade InGaAsSb/AlGaAsSb MQW laser diode and an InGaAs wavelength extended photodiode. Details of the devices and the detection system are described. In the system, the laser is driven by low frequency pulses with long duration to form a wavelength scan around 4741 cm^-1; the absorption information is obtained from the detected signal of the photodiode. By using a gas cell with 15cm path length, a detection limit is estimated to be smaller than 0.2 Torr.

关 键 词：coated conductor buffer layer self-epitaxy CeO2 

分 类 号：O43[机械工程—光学工程]