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机构地区:[1]FML, Department of Engineering Mechanics, Tsinghua University, Beijing 100084 [2]Institute of Physics, Chinese Academic of Sciences, Beijing 100080 [3]Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016
出 处:《Chinese Physics Letters》2007年第9期2521-2524,共4页中国物理快报(英文版)
基 金:Supported by the National Basic Research Programme of China under Grant No 2004CB619304, the National Natural Science Foundation of China under Grant Nos 10625209, 10472050, and 10121202, the Excellent Young Teacher Programme of the Ministry of Education of China, and the Programme for New Century Excellent Talents (NCET) in University, Ministry of Education of China.
摘 要:A focused gallium ion (Ga+) beam is used to fabricate micro/submicron spacing gratings on the surface of porous NiTi shape memory alloy (SMA ). The crossing type of gratings with double-frequency (25001/mm and 50001/mm) using the focused ion beam (FIB) milling are successfully produced in a combination mode or superposition mode. Based on the double-frequency gratings, high-quality scanning electron microscopy (SEM) Moird patterns are obtained to study the micro-scale deformation of porous NiTi SMA. The grating fabrication technique is discussed in detail. The experimental results verify the feasibility of fabricating high frequency grating on metal surface using FIB milling.A focused gallium ion (Ga+) beam is used to fabricate micro/submicron spacing gratings on the surface of porous NiTi shape memory alloy (SMA ). The crossing type of gratings with double-frequency (25001/mm and 50001/mm) using the focused ion beam (FIB) milling are successfully produced in a combination mode or superposition mode. Based on the double-frequency gratings, high-quality scanning electron microscopy (SEM) Moird patterns are obtained to study the micro-scale deformation of porous NiTi SMA. The grating fabrication technique is discussed in detail. The experimental results verify the feasibility of fabricating high frequency grating on metal surface using FIB milling.
分 类 号:O56[理学—原子与分子物理]
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