Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers  

作　　者：夏正月 韩培高 徐骏 陈德媛 韦德远 马忠元 陈坤基 徐岭 黄信凡 

机构地区：[1]National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093

出　　处：《Chinese Physics Letters》2007年第9期2657-2660,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Nos 60425414, 50472066, 90301009 and 10574069, the Natural Science Foundation of Jiangsu Province （BK2006715）, and the National Basic Research Programme of China under Grant No 2007CB613401.

摘　　要：Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.

关 键 词：coated conductor buffer layer self-epitaxy CEO2 

分 类 号：O43[机械工程—光学工程]