Electrical Characterization of Copper Phthalocyanine Thin-Film Transistors with Fluoride Gate Insulator  

作　　者：于顺洋 仪明东 马东阁 

机构地区：[1]State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 [2]Graduate School of the Chinese Academy of Sciences, Beijing 100049

出　　处：《Chinese Physics Letters》2007年第9期2704-2706,共3页中国物理快报（英文版）

摘　　要：Different fluoride materlals are used as gate dielectrics to fabricate copper phthalocyanine （CuPc） thin film transistors （OTFTs）. The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10^-3 to 10^-1 cm^2V^-1 s^-1. The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs, The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.Different fluoride materlals are used as gate dielectrics to fabricate copper phthalocyanine （CuPc） thin film transistors （OTFTs）. The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10^-3 to 10^-1 cm^2V^-1 s^-1. The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs, The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.

关 键 词：ORGANIC TRANSISTORS MOBILITY 

分 类 号：O484[理学—固体物理]