Ultraviolet Phototransistors on AlGaN/GaN Heterostructures  

作　　者：陈辰 姜文海 任春江 李忠辉 焦刚 董逊 陈堂胜 

机构地区：[1]Department of Physics, Nanjing University, Nanjing 210093 [2]National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016

出　　处：《Chinese Physics Letters》2007年第9期2707-2709,共3页中国物理快报（英文版）

摘　　要：We report on the fabrication and characterization of phototransistors based on AIGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions： as a high electron mobility transistor （HEMT） and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170mS/ram, while the minimum cutoff frequency fT and the maximum oscillation frequency fm are 19 and 35 GHz, respectively. As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude, and a responsivity as high as 1700 A/W at the wavelength of 362nm.We report on the fabrication and characterization of phototransistors based on AIGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions： as a high electron mobility transistor （HEMT） and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170mS/ram, while the minimum cutoff frequency fT and the maximum oscillation frequency fm are 19 and 35 GHz, respectively. As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude, and a responsivity as high as 1700 A/W at the wavelength of 362nm.

关 键 词：coated conductor buffer layer self-epitaxy CEO2 

分 类 号：O434.2[机械工程—光学工程]