Period-Doubling in 10 GHz Gain-Switched DFB Laser Diode  

作　　者：伍剑 邱吉芳 林金桐 

机构地区：[1]Key Laboratory of Optical Communication and Lightwave Technologies (Ministry of Education), Belting University of Posts and Telecommunications, Beijing 100876

出　　处：《Chinese Physics Letters》2007年第10期2852-2854,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 90401025, the Ministry of Education of China under Grant No NCET-04-0116 and 105036.

摘　　要：The distinct period doubling behaviour in a 10 GHz gain-switched （GS） DFB laser is experimentally investigated in frequency domain and in time domain. The period doubling occurs as the frequency of the rf driving signal is close to or higher than the-3 dB cutoff frequency of the DFB laser diode, and the amplitude of the rf driving signal required to achieve period doubling increases linearly with the increasing bias current of the laser diode.The distinct period doubling behaviour in a 10 GHz gain-switched （GS） DFB laser is experimentally investigated in frequency domain and in time domain. The period doubling occurs as the frequency of the rf driving signal is close to or higher than the-3 dB cutoff frequency of the DFB laser diode, and the amplitude of the rf driving signal required to achieve period doubling increases linearly with the increasing bias current of the laser diode.

关 键 词：SEMICONDUCTOR-LASERS MODULATION 

分 类 号：O46[理学—电子物理学]