Defect-Bound Carrier Mediated Room-Temperature Ferromagnetism in Co-Doped ZnO Powders  

作　　者：文岐业 张怀武 宋远强 杨青慧 John.Xiao 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 [2]Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA

出　　处：《Chinese Physics Letters》2007年第10期2955-2958,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 90306015, the National Basic Research Programme of China under Grant No 2007CB31407 and the International S＆T Cooperation Programme of China under Grant No 2006DFA53410.

摘　　要：We prepare pure single-phase Co：ZnO powders introducing controllable interstitial Zni by Zn vapour annealing. The as-ground powder shows that no room-temperature ferromagnetism （RT-FM） exists, while the Zn vapour treated samples exhibit unambiguous RT-FM with a maximum magnetic moment of 0.2μB/Co. The FM of Co：ZnO strongly depends on the Zn diffusion process, suggesting that not only carriers but also Zni defects play an important role in mediating FM in diluted magnetic semiconductors. A new core-shell model is proposed to interpret the mixture behaviour of FM and paramagnetism observed in the Zn vapour annealed Co：ZnO powders.We prepare pure single-phase Co：ZnO powders introducing controllable interstitial Zni by Zn vapour annealing. The as-ground powder shows that no room-temperature ferromagnetism （RT-FM） exists, while the Zn vapour treated samples exhibit unambiguous RT-FM with a maximum magnetic moment of 0.2μB/Co. The FM of Co：ZnO strongly depends on the Zn diffusion process, suggesting that not only carriers but also Zni defects play an important role in mediating FM in diluted magnetic semiconductors. A new core-shell model is proposed to interpret the mixture behaviour of FM and paramagnetism observed in the Zn vapour annealed Co：ZnO powders.

关 键 词：ELECTRIC PROPERTIES FILMS ZN1-XCOXO ABSENCE 

分 类 号：O512[理学—低温物理]