Light-Induced Domain Inversion in Mg-Doped near Stoichiometric Lithium Niobate Crystals  

作　　者：刘宏德 孔勇发 胡茜 吴日雯 王文杰 李晓春 陈绍林 刘士国 许京军 

机构地区：[1]The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457

出　　处：《Chinese Physics Letters》2007年第6期1720-1723,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60578019, the Research Fund for Changjiang Scholars, and Innovative Research Team in University of China

摘　　要：We investigate the influence of visible light on domain inversion in Mg-doped near stoichiometric lithium niobate crystals and find that the switching electric field decreases about 70% above a threshold light intensity. This effect helps us optically control domain switching and produce bulk domain structures on the micrometre scale. Finally, we introduce a model of photo-induced carriers to explain the origin of the reduction of switching electric field.We investigate the influence of visible light on domain inversion in Mg-doped near stoichiometric lithium niobate crystals and find that the switching electric field decreases about 70% above a threshold light intensity. This effect helps us optically control domain switching and produce bulk domain structures on the micrometre scale. Finally, we introduce a model of photo-induced carriers to explain the origin of the reduction of switching electric field.

关 键 词：LINBO3 GENERATION LITAO3 FIELD DYNAMICS DEVICES 

分 类 号：O43[机械工程—光学工程]