X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si（100） Using C60 and Si  

作　　者：刘衍芳 刘金峰 徐彭寿 潘海斌 

机构地区：[1]National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029

出　　处：《Chinese Physics Letters》2007年第7期2022-2024,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50572100.

摘　　要：The formation of silicon carbide upon deposition of C60 and Si on Si（100） surface at 850^o C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction （RHEED）. The C ls, O ls and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C-SiC.The formation of silicon carbide upon deposition of C60 and Si on Si（100） surface at 850^o C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction （RHEED）. The C ls, O ls and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C-SiC.

关 键 词：SILICON-CARBIDE FILMS CARBONIZATION TEMPERATURE MOLECULES SURFACE 

分 类 号：O43[机械工程—光学工程]