High Field Electrical Conduction in Pre-Formed A1-ZnS-AI Thin Films in Metal-Insulator-Metal Devices  

作　　者：M. Y. Nadee Nadeem Iqbal M. F. Wasiq A. U. Khosa 

机构地区：[1]Department of Playsics, Balaauddin Zakariya University Multan, Pakistan

出　　处：《Chinese Physics Letters》2007年第7期2068-2069,共2页中国物理快报（英文版）

摘　　要：The high field electrical conduction mechanism for the widely used ZnS thin films in the microelectronic industry is investigated. Experimental data on the dc conduction as a function of the applied bias for the A1-ZnS-A1 devices is carefully compared with the theoretical equations given by Schottky and Poole-Freukel. The resu/ts yield the value of the coefficient of the barrier lowering compatible with the Schottky theory rather than the Poole-Frenkel theory, which are also in agreement with the results reported earlier by Maekawa [Phys. Rev. Lett. 24 （1970） 1175]The high field electrical conduction mechanism for the widely used ZnS thin films in the microelectronic industry is investigated. Experimental data on the dc conduction as a function of the applied bias for the A1-ZnS-A1 devices is carefully compared with the theoretical equations given by Schottky and Poole-Freukel. The resu/ts yield the value of the coefficient of the barrier lowering compatible with the Schottky theory rather than the Poole-Frenkel theory, which are also in agreement with the results reported earlier by Maekawa [Phys. Rev. Lett. 24 （1970） 1175]

分 类 号：O[理学]