A scheme for the implementation of unconventional geometric phase gates with trapped ions  

作　　者：谢鸿 李洪才 杨榕灿 林秀 黄志平 

机构地区：[1]School of Physics and Optoelectronics Technology,Fujian Normal University,Fuzhou350007,China

出　　处：《Chinese Physics B》2007年第11期3382-3385,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 10574022）, and the Funds of the Natural Science of Fujian Province, China （Grant Nos Z0512006 and A0210014）.

摘　　要：We propose a scheme for the realization of unconventional geometric two-qubit phase gates with two identical two-level ions, In the present scheme, the two ions are simultaneously illuminated by a standing-wave laser pulse with its pulse frequency being tuned to the ionic transition. The gate operation time can be much shorter, making the system robust against decoherence. In addition, we choose the appropriate experimental parameters to construct the geometric phase gate in one step, and thus avoid implementing the pure geometric single qubit operation.We propose a scheme for the realization of unconventional geometric two-qubit phase gates with two identical two-level ions, In the present scheme, the two ions are simultaneously illuminated by a standing-wave laser pulse with its pulse frequency being tuned to the ionic transition. The gate operation time can be much shorter, making the system robust against decoherence. In addition, we choose the appropriate experimental parameters to construct the geometric phase gate in one step, and thus avoid implementing the pure geometric single qubit operation.

关 键 词：unconventional geometric phase gate trapped ions two-level ions 

分 类 号：O43[机械工程—光学工程]