MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs  

作　　者：程知群 蔡勇 刘杰 周玉刚 Lau Kei May Chen J.Kevin 

机构地区：[1]Microelectronics CAD Center,Hangzhou Dianzi University Hangzhou 310018,China [2]Department of Electrical and Computer Engineering,HongKong University of Science and Technology,HongKong,China

出　　处：《Chinese Physics B》2007年第11期3494-3497,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 60476035）.

摘　　要：A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.

关 键 词：slow noise amplifier composite-channel A1GaN/GaN HEMTs LINEARITY 

分 类 号：TN4[电子电信—微电子学与固体电子学]