RF-PECVD制备微晶硅薄膜的X射线衍射研究  

Study of XRD on Microcrystalline Silicon Thin Films Prepared by RF-PECVD

作　　者：蔡宏琨[1] 张德贤[2] 何青[1] 赵飞[2] 陶科[2] 席强[2] 孙云[1] 

机构地区：[1]南开大学信息技术科学学院光电子薄膜器件与技术研究所,天津300071 [2]南开大学信息技术科学学院电子科学与技术系,天津300071

出　　处：《人工晶体学报》2007年第3期545-549,共5页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863计划)项目(2006AA05Z422);天津市科技发展计划公关培育项目(06YFGPGX08000)

摘　　要：采用X射线衍射(XRD)技术连续扫描法和薄膜衍射法对RF-PECVD制备的微晶硅薄膜结构进行了研究。改变硅烷浓度和反应功率,控制薄膜的生长速率,已达到制备不同材料的目的。根据硅基薄膜的电学特性和XRD测试,随着反应功率的增加,硅基薄膜的生长速率不断提高,微晶硅薄膜的晶化程度不断增大。The structure of microcrystalline silicon thin film had been investigated by X-ray diffraction which had Continuous scanning method and thin film diffraction method. Silicon-based thin film was prepared by RF-PECVD. The deposition rate was controlled by changing the silicon concentration （SC） and growth power. From the result of XRD and electronic property,it can be concluded when the power is increased the deposition rate of silicon based thin films is increased and the crystalline fraction of hydrogenated microcrystalline silicon （μc-Si：H） is enhanced.

关 键 词：X射线衍射(XRD) 氢化非晶硅(a-Si:H)薄膜 氢化微晶硅(μc-Si:H)薄膜 晶粒尺寸 

分 类 号：TN304[电子电信—物理电子学]