放电等离子烧结硼-碳系陶瓷  

Synthesis and Densification of B-C Ceramics by Spark Plasma Sintering

作　　者：章嵩[1] 杨蕊[1] 沈强[1] 王传彬[1] 张联盟[1] 

机构地区：[1]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《人工晶体学报》2007年第3期672-674,共3页Journal of Synthetic Crystals

基　　金：国家973课题(No.51331)资助项目

摘　　要：采用高纯硼粉和碳粉放电等离子烧结工艺(Spark Plasma Sintering technique)烧结了三种不同化学计量比的硼-碳系陶瓷,分别为:B3.5C,B4.0C和B4.5C。用X射线衍射分析了烧结体的物相。结果表明:原始粉末在1300～1600℃合成富硼碳化硼陶瓷(B4C1-x),致密化过程则发生在1700℃～1900℃。用放电等离子烧结成功地在1900℃获得了相对致密度大于95%的碳化硼陶瓷。Three kinds of stoichiometric boron carbide, named as B3.5 C, B4.0 C and B4.5 C, were synthesized from carbon and boron powders and densified simultaneously by Spark Plasma Sintering （SPS） technique. The changes of crystal phase during the sintering process were characterized by XRD. The results showed that boron carbide was synthesized at 1300-1600℃, which was found to be composed of free-C and B-rich boron carbide （B4C（1-x））. In the later temperature range from 1700℃ to 1900℃, the densification of boron carbide began to occur. At a lower temperature of 1900℃, B3.5C, B4.0C and B4.5C with a high relative density （ 〉95% ） were successfully prepared by SPS.

关 键 词：碳化硼 放电等离子烧结 合成 致密化 

分 类 号：O78[理学—晶体学]