一种可减小工艺影响的带隙基准电压源  

Band-Gap Voltage Reference with Reduced Process Influence

作　　者：蒋正萍[1] 巫从平[1] 

机构地区：[1]成都电子机械高等专科学校,成都610031

出　　处：《微电子学》2007年第5期761-763,共3页Microelectronics

摘　　要：提出了一种新颖的基准电压源结构,有效地减小了运算放大器由于工艺偏差给基准电压源带来的影响。该电路在面积上与现有传统结构基本相同,并且具有与传统结构相同的温度补偿系数和良好的电源抑制比(PSRR)。A new structure of voltage reference source was proposed, which reduced the influence of offset caused by semiconductor process. The size of the proposed structure is the same as that of the conventional one. And the temperature compensation coefficient and power supply rejection ratio （PSRR） of the proposed structure are as good as those of the conventional structure.

关 键 词：带隙电压基准源 温度补偿 正比于温度 负比于温度 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]