高压串级延迟击穿开关在快前沿脉冲触发源中的应用  

Series-connected high voltage delayed breakdown device switches applied to pulse trigger generator for fast risetime

作　　者：孙铁平[1] 韩娟娟[1] 吴撼宇[1] 黄涛[1] 张国伟[1] 丛培天[1] 蒯斌[1] 曾正中[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《强激光与粒子束》2007年第10期1744-1746,共3页High Power Laser and Particle Beams

基　　金：国家自然科学基金资助课题(10035020)

摘　　要：报导了一种高压串级延迟击穿(DBD)开关在快脉冲触发源中的应用,介绍了脉冲源的电路结构和工作原理,并将DBD开关成功应用于快前沿脉冲触发源,获得了明显的脉冲陡化效果。串级DBD开关的级数为15级,直流击穿电压45 kV,脉冲工作电压60 kV,脉冲前沿由95 ns减小到21.5 ns,脉冲宽度50 ns。High power delayed breakdown device（DBD） switches containing fifteen series-connected semiconductor structures are introduced. The series-connected DBD switches have been applied to fast risetime trigger generator. The experimental results show that the input pulse is sharpened significantly by series-connected DBD switches. The series-connected DBD switches have a hold-off voltage 60 kV, and the risetime is reduced from 95 ns to 21.5 ns. The pulse width of output pulse is 50 ns.

关 键 词：延迟击穿开关 脉冲触发源 脉冲变压器 脉冲陡化 

分 类 号：TN78[电子电信—电路与系统]