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机构地区:[1]安徽工程科技学院,安徽芜湖241000 [2]中南大学材料科学与工程学院,长沙410083 [3]湖南有色金属研究院,长沙410015
出 处:《有色金属》2007年第4期40-44,共5页Nonferrous Metals
基 金:国家"863"高技术研究发展计划项目(2002AA302606)
摘 要:用化学共沉淀法结合离子交换法,以InCl3溶液和SnCl4.5H2O为原料,制备ITO粉体。对ITO前驱体进行TG-DTA分析,用TEM和XRD等对ITO粉体的形貌、物相和粒度进行表征,探讨煅烧温度和掺锡量对粉体物相、粒度和导电性能的影响。结果表明,在煅烧温度332℃以上发生晶型转变,获得立方In2O3结构的球形纳米ITO粉体,具有纯度高、粒度均匀、分散性好等特点。在700℃掺Sn量为10%时,晶形结构完善,晶粒粒度最小,粉体电阻最小,导电性能最好。通过团聚系数可以判断粉体的团聚情况,团聚系数越小,粉体分散性越好。The Sn-doped In203(ITO) powders is prepared in by co-precipitation and ion exchange method with the solution of InCl3 and SnCl4· 5H2O as row materials. The ITO precursor is analyzed by TG-DTA, and the morphology characterization, phase composition and particle size of the ITO powders are characterized by means of TEM and XRD. The effects of calcination temperature and Sn dosage on the phase composition, particle size and conductivity are investigated. The results show that the phase transformation occurs over 320℃ of calcinations temperature, and nanosized ITO powders with cubic In2O3 structure and spherical particle are gained, the ITO powders are of high purity, uniform particle size and good dispersibility. The perfect crystalline structure, minimum crystallite size, minimum powder resistance and the best conductivity of ITO powder are achieved with 10 % Sn at the calcinations temperature 700℃. The coacervation factor can be used to judge the coacervation of powders, the smaller the coacervation factor is, the better the dispersibility is.
分 类 号:TN304[电子电信—物理电子学] TF803.24[冶金工程—有色金属冶金]
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