机构地区:[1]School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China [2]Key Laboratory of the Ministry of Education of China for Optical Communication and Lightwave Technologies, Beijing 100876, China [3]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
出 处:《Journal of University of Science and Technology Beijing》2007年第5期477-481,共5页北京科技大学学报(英文版)
基 金:This work was financially supported by the "973" National Basic Research Program of China (No. 2003CB314901);the National "863" High Technology Project of China (No. 2003AA311070);the Open Project of State Key Laboratory on Integrated Opto-electronics.
摘 要:A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in the case of groffth direction on (001) substrate was presented. The three-dimensional finite element analysis for an array of dots was used for the strain calculation. The dependence of the strain energy density distribution on the thickness of the capping layer was investigated in detail when the elastic characteristics of the matrix material were anisotropic. It is shown that the elastic anisotropic greatly influences the stress, strain, and strain energy density in the quantum dot structures. The anisotropic ratio of the matrix material and the combination with different thicknesses of the capping layer, may lead to different strain energy density minimum locations on the capping layer surface, which can result in various vertical ordering phenomena for the next layer of quantum dots, i.e. partial alignment, random alignment, and complete alignment.A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in the case of groffth direction on (001) substrate was presented. The three-dimensional finite element analysis for an array of dots was used for the strain calculation. The dependence of the strain energy density distribution on the thickness of the capping layer was investigated in detail when the elastic characteristics of the matrix material were anisotropic. It is shown that the elastic anisotropic greatly influences the stress, strain, and strain energy density in the quantum dot structures. The anisotropic ratio of the matrix material and the combination with different thicknesses of the capping layer, may lead to different strain energy density minimum locations on the capping layer surface, which can result in various vertical ordering phenomena for the next layer of quantum dots, i.e. partial alignment, random alignment, and complete alignment.
关 键 词:quantum dot SELF-ORGANIZATION elastic strain field SUPERLATTICE
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