氙激光等离子体的双电子复合过程研究(英文)  

Dielectronic recombination process in laser-produced Xe plasmas

作　　者：焦荣珍[1] 冯晨旭[1] 张茹[1] 

机构地区：[1]北京邮电大学理学院,北京100876

出　　处：《原子与分子物理学报》2007年第5期1115-1117,共3页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金(60054402)

摘　　要：在自旋-轨道劈裂阵模型下,通过类铜的内壳层激发组态计算了类镍氙的双电子复合速率系数,其中考虑了共振和非共振辐射平衡跃迁对自电离能级的影响,而忽略了因碰撞跃迁引起的电子俘获,非共振辐射平衡跃迁在低电子温度条件下主要影响双电子复合过程;本文讨论了双电子复合系数及双电子伴线强度比随电子温度的变化.Dielectronic recombination （DR） coefficients for the ground-state ion of Ni-like Xe have been calculated through Cu-like 3d^9 nln＇f（ n, n′= 4,5,6） inner-shell excited configurations using the spin-orbit-split array （SOSA） model. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. Nonresonant stabilizing transitions are found to enhance DR rates, and may even dominate the process at low electron temperature. The trend of the DR rate coefficients and the ratio of dielectronic satellite lines intensities with the change of the electron temoerature are discussed.

关 键 词：双电子复合 自电离 辐射衰减 

分 类 号：O562.4[理学—原子与分子物理]