室温电化学法制备白钨矿SrWO_4晶态膜的生长特性研究(英文)  

Growth Characteristic of Scheelite SrWO_4 Film by Using Electrochemical Technique at Room Temperature

作　　者：安红娜[1] 杨祖念[1] 肖定全[1] 余萍[1] 刘志强[1] 陈连平[1] 黄昕[1] 王辉[2] 

机构地区：[1]四川大学材料科学与工程学院材料科学系,成都610064 [2]四川大学分析测试中心,成都610064

出　　处：《人工晶体学报》2007年第5期1056-1061,共6页Journal of Synthetic Crystals

基　　金：This work supported by National Natural Science Foundation of China (No. 50410179)

摘　　要：采用恒电流电化学技术直接在金属钨片上制备了具有白钨矿结构的钨酸锶(SrWO4)晶态薄膜,通过SEM和EDX测试分析方法,研究了薄膜在不同的生长阶段(包括薄膜从最初成核并开始生长,到薄膜布满整个基片,即薄膜生长结束)的生长特性。研究结果表明,SrWO4晶核和晶粒优先选择在基片的缺陷处堆砌生长,在薄膜生长的初期,一定数量的WO4负离子配位多面体沉积在基片上并形成具有白钨矿结构的骨架,继而Sr2 +对该骨架进行填充,由此形成晶核和晶粒;随着沉积时间的延长,晶粒密度不断增大,晶核和晶粒也不断长大,并沿着c轴生长的方向开始分叉,晶粒越大分叉越多;最终,当SrWO4薄膜生长过程结束时,团簇生长的花菜状晶粒布满整个基片,形成致密的薄膜。该研究结果对晶态薄膜电化学制备生长机制的认识、以及采用电化学方法制备晶态薄膜的工艺调控都具有重要意义。Strontium tungstate （SrWO4） films were prepared directly on metal tungsten substrates at room temperature in different time from the early stage to the terminal stage of film growth by using constant current electrochemical technique. The growth process of SrWO4 films was investigated through the SEM and EDX measurement. It was found that the crystalline nucleus and granules of the SrWO4 films choose the defect positions on the substrates prior to form and grow; at the early stage of the film growth, a quantity of WO4 anion coordination polyhedra deposit on the substrate and form the scheelite framework, then the Sr^2＋ ions fill in the framework resulting in the crystalline nucleus and granules; along with the increase of the deposition time, the number of the crystalline granules increases continually, the crystalline nucleus and granules grow up and bifurcate along the direction of its c axis growth, the bigger the crystalline granules are the more the offshoots are; at last, the SrWO4 crystalline granules become cauliflower form, and bestrew the whole tungsten substrate to form the compact SrWO4 crystalline films. The results of present research have great significance for the understanding of the growth mechanism of crystalline films and the controlling of the growth processes of the crystalline films by using electrochemical technique.

关 键 词：电化学技术 SrWO4薄膜 负离子配位多面体 晶态薄膜生长过程 

分 类 号：O484[理学—固体物理]