改进的升华法制备氮化铝单晶体(英文)  

Growth of AlN Single Crystals by Modified Sublimation Method

作　　者：孙秀明[1] 郑瑞生[1] 鲁枫[1] 武红磊[1] 刘文[1] 敬守勇[1] 

机构地区：[1]深圳大学光电子学研究所,深圳518060

出　　处：《人工晶体学报》2007年第5期1160-1165,共6页Journal of Synthetic Crystals

基　　金：The project supported by the National Natural Science Foundation of China (No.60376003,No.60576005);The Natural ScienceFoundation of Guangdong Province(No.04011297)

摘　　要：采用改进的升华法在氮气环境下制备氮化铝单晶体。通过优化实验条件制备出了六角形的高质量的氮化铝单晶体。实验发现,在坩埚的不同区域得到的氮化铝晶体的大小和形态有所不同。讨论了温度梯度对氮化铝晶体尺寸大小和形态的影响。AlN crystals were grown by modified sandwich sublimation method in nitrogen atmosphere. High quality AlN single crystals with typical hexagonal crystal habit were obtained by optimizing growth conditions. It was found that the AlN crystals which were grown on different regions in the crucible exhibit different crystal habits. The influence of the temperature gradient on the size and morphology of the crystals was discussed.

关 键 词：升华法 氮化铝单晶体 晶体形态 

分 类 号：O782[理学—晶体学]