ZnO/Si(111)界面结构的同步辐射掠入射X射线衍射研究  

A Study of ZnO/Si(111) Interface Structure by Synchrotron Radiation X-Ray Grazing Incident Diffraction

作　　者：赵朝阳[1] 李锐鹏[1] 孙柏[1] 徐彭寿[1] 张国斌[1] 潘国强[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《Journal of Semiconductors》2007年第11期1756-1760,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:50532070)~~

摘　　要：在不同的衬底温度下,用脉冲激光沉积(PLD)方法制备了c轴高度取向的ZnO薄膜.采用同步辐射掠入射X射线衍射(GID)技术研究了ZnO薄膜与Si(111)衬底的界面结构.GID结果表明:不管衬底温度是500℃还是300℃,在无氧气氛下用PLD方法制备的ZnO外延膜均处于压应力状态,且随着X射线探测深度的增加,应力增大.结合常规X射线衍射技术,计算了薄膜内的双轴应力;给出了样品的泊松比和c/a值,得出两样品均接近理想的六方密堆积结构,偏离标准的ZnO值.综合各方面实验结果,说明衬底温度控制在500℃时生长的ZnO薄膜具有较好的晶体质量.High-quality c-axis oriented ZnO thin films are grown on Si（111） substrates at different substrate temperatures by pulsed laser deposition. Synchrotron radiation X-ray grazing incident diffraction （GID） is employed to study the interface structure of ZnO/Si（111）. GID results indicate that there is a compressive stress in all ZnO epitaxial films grown at substrate temperatures of 500 or 300℃ by PLD. With the increase of X-ray detection depth, the compressive stress increases. Combined with conventional XRD technology, the biaxial stress, Possion＇s ratio, and c/a of the ZnO films are calculated. The two sam- ples have a six-sided closed packing structure,deviating from the value of the standard ZnO. This indicates that the sample grown at 500~C has better crystal quality.

关 键 词：ZNO PLD 掠入射衍射 同步辐射 

分 类 号：TN304.05[电子电信—物理电子学]