Pd在p型单晶硅(100)表面自催化化学沉积(英文)  

Autocatalytic Electroless Deposition of Palladium onto p-Silicon (100)

作　　者：陈扬[1] 景粉宁[1] 叶为春[1] 王春明[1] 

机构地区：[1]兰州大学化学化工学院,兰州730000

出　　处：《物理化学学报》2007年第11期1743-1746,共4页Acta Physico-Chimica Sinica

基　　金：教育部博士基金(20030730014)资助项目

摘　　要：研究了Pd在氢终止的p型单晶硅(100)表面的自催化化学沉积(AED).在室温下将刻蚀过的硅片浸入常规的HF-PdCl_2-HCl溶液制备了Pd膜.将沉积了Pd的基底作为工作电极,用循环伏安法(CV)、原子力显微镜(AFM)和X射线光电子能谱(XPS)研究了Pd膜的阳极溶出行为和形貌.结果表明,Pd的生长遵循Volmer-Weber (VW)生长模式,Pd膜给出了很好的支持.The autocatalytic electroless deposition （AED） of palladium onto p-silicon （100） with hydrogen termination was studied. Pd films were prepared by immersing the hydrogen-terminated silicon wafers into conventional HF-PdCl2- HCl solution at room temperature. The anodic stripping behaviors and morphologies of the Pd deposits were studied using cyclic voltammetry （CV）, atomic force microscopy （AFM）, and X-ray photoelectron spectroscopy （XPS）. The results showed that the Pd growth was in Volmer-Weber （VW） mode and the Pd film had good adhesion.

关 键 词：自催化化学沉积 阳极溶出 PD 原子力显微镜 p型单晶硅(100) 

分 类 号：O643.3[理学—物理化学]