关于提高高亮度发光二极管发光效率的探讨  

Study Based on Enhancing the Light Emitting Efficiency of HBLED

作　　者：刘一兵[1] 

机构地区：[1]湖南大学电气与信息工程学院

出　　处：《现代显示》2007年第11期39-43,共5页Advanced Display

摘　　要：使用高亮度发光二极管(HB-LED)的半导体照明技术正受到全球关注,而存在的主要问题是发光效率低。本文指出发光效率即外量子效率是内量子效率和提取效率的乘积。提高内量子效率的方法是获得高质量GaN材料的外延技术,采用四组分AlInGaN结构及在半极性面或非极性面上制作LED,提高提取效率的途径主要有倒装焊技术、表面粗化技术、芯片粘合技术、芯片成形技术以及微芯片阵列技术等。Semiconductor lighting on HB-LED is focused by all the globe. The main problem of HB-LED is low light emitting efficiency. The paper pointed out that light emitting efficiency or external quantum efficiency is internal quantum efficiency multiplied by extraction efficiency. The methods to enhance internal quantum efficiency include epitaxial technology of superior GaN substrate. AllnGaN structure and manufacturing LED are on non- polarized or semi-polarized planes. The methods to enhance extraction efficiency include flip-chip technology, surface roughness technology, wafer bonding technology, chip shape technology, u-chip array technology, etc.

关 键 词：高亮度LED 发光效率 内量子效率 提取效率 

分 类 号：TN27[电子电信—物理电子学]