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作 者:YANG Zhong-dong LIU Su-lan LI Zhe-fu XUE Xiang-xin
机构地区:[1]School of Materials and Metallurgy, Northeastern University, Shenyang 110004, Liaoning, China
出 处:《Journal of Iron and Steel Research International》2007年第6期32-36,共5页
基 金:Item Sponsored by National Natural Science Foundation of China and Shanghai Baosteel Group Corporation (50374024) ;Hi-Tech Research and Development Programof China (2006AA03Z529)
摘 要:A new process of directly smelting boron steel from boron-containing pig iron has been established. The starting material boron-containing pig iron was obtained from ludwigite ore, which is very abundant in the eastern area of Liaoning Province of China. The experiment was performed in a medium frequency induction furnace, and Fe2O3 powder was used as the oxidizing agent. The effects of temperature, addition of Fe2O3, basicity, stirring, and composition of melt on the oxidation of silicon and boron were investigated respectively. The results showed that sili- con and boron were oxidized simultaneously and their oxidation ratio exceeded 90% at 1 400℃. The favorable oxidation temperature of silicon was about 1 300-- 1 350℃. High oxygen potential of slag and strong stirring enhanced the oxidation of silicon and boron.A new process of directly smelting boron steel from boron-containing pig iron has been established. The starting material boron-containing pig iron was obtained from ludwigite ore, which is very abundant in the eastern area of Liaoning Province of China. The experiment was performed in a medium frequency induction furnace, and Fe2O3 powder was used as the oxidizing agent. The effects of temperature, addition of Fe2O3, basicity, stirring, and composition of melt on the oxidation of silicon and boron were investigated respectively. The results showed that sili- con and boron were oxidized simultaneously and their oxidation ratio exceeded 90% at 1 400℃. The favorable oxidation temperature of silicon was about 1 300-- 1 350℃. High oxygen potential of slag and strong stirring enhanced the oxidation of silicon and boron.
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