Si/SiO_2和SiN_x/SiO_2多层膜的室温光致发光  

Photoluminescence of Si/SiO_2 and SiN_x/SiO_2 Multilayers

作　　者：陈青云[1] 徐明[1] 段满益[1] 陈卫东[1] 丁迎春[1] 纪红萱[1] 沈益斌[1] 

机构地区：[1]四川师范大学物理与电子工程学院与固体物理研究所,四川成都610068

出　　处：《半导体光电》2007年第5期680-684,共5页Semiconductor Optoelectronics

基　　金：四川省教育厅重点基金项目(2005A092);四川师范大学重点研究课题(037003)

摘　　要：采用射频磁控溅射法,制备了纳米Si/SiO2和SiNx/SiO2多层膜,得到强的可见光致发光,利用傅里叶红外吸收(FTIR)谱和光致发光(PL)谱,对其发光特性进行了研究,在374 nm和712 nm左右观察到强发光峰。用量子限制-发光中心(QCLC)模型解释了其可能的发光机制,认为发光可能源自于SiOx界面处的缺陷发光中心。建立了发光的能隙态(EGS)模型,认为440 nm和485 nm的发光源于N-Si-O和Si-O-Si缺陷态能级。Si/SiO2 and SiNx/SiO2 multilayers were prepared on Si（100） at room temperature by radio-frequency （RF） magnetron sputtering. The optical properties of these films were investigated using Fourier transform infrared （FTIR） absorption and photoluminescence （PL） spectra. Strong photoluminescence at 374 nm and 712 nm is observed. The quantum confinement- luminescence center（QCLC） model is adopted to interpret the PL results. The two PL peaks at 374 nm and 712 nm are attributed to the luminescence center of defect states at the SiOx interface. On the other hand, it is suggested that the peaks appeared at 440 nm and 485 nm after annealing be related to the N--Si--O and Si--O--Si defect states level.

关 键 词：Si/SiO2多层膜 SiNx/SiO2多层膜 红外吸收 光致发光 

分 类 号：O657.3[理学—分析化学]