分形基片上无序金属薄膜的阻-温特性  

The Temperature Dependence of the Resistivity of the Random Metallic Films Deposited on the Fractal Substrates

作　　者：叶高翔[1] 陶向明[1] 许宇庆[1] 葛洪良[1] 张其瑞[1] 

机构地区：[1]浙江大学物理系

出　　处：《真空科学与技术》1997年第3期190-193,共4页Vacuum Science and Technology

基　　金：浙江省自然科学基金!193054

摘　　要：研究了沉积在具有无规分形结构的α－Al2O3陶瓷基底上的两侧非平整无序Pt和Au薄膜的异常R－T特性。实验结果表明：在12～200K的温区内，当薄膜的方块电阻减小至102～103Ω量级时，基底上的分形结构开始对样品的R－T特性产生明显的影响，电阻温度系数由正向负急剧转化。分析认为，在低温区的此种异常现象是由薄膜中的电子－电子相互作用和电子的弱局域化效应引起的。In this paper,the anomalous temperature dependence of the resistivity of the bilateral rough random Au and Pt metallic films,deposited on the fracture surfaces of α-Al2O3 ceramics,is studied. The experimental results show that,in the temperature interval of T=12~200K,the fractal structure in the substrates begins to obviously affect the temperature dependence of the resistivity if the film resistance is higher than the order of 103Ω and the temperature coefficient of the resistivity changes sign sharply. It is believed that the anomalous phenomenon is resulted from both the electron-electron interaction and the weak localization effect in the films.

关 键 词：分形体 无序薄膜 局域化 金属 薄膜 阻温特性 

分 类 号：O484.42[理学—固体物理]