ZnO基透明导电薄膜制备方法研究进展  

Progress of Deposition Techniques for ZnO-based Transparent Conductive Thin Films

作　　者：谭天亚[1] 江雪[1] 崔春阳[1] 李春梅[1] 徐广文[1] 吴炜[1] 郭永新[1] 

机构地区：[1]辽宁大学物理学院沈阳市光电子功能器件与检测技术重点实验室,辽宁沈阳110036

出　　处：《辽宁大学学报（自然科学版）》2007年第4期334-338,共5页Journal of Liaoning University：Natural Sciences Edition

基　　金：辽宁大学科研启动基金资助项目(408041)

摘　　要：ZnO基透明导电薄膜与掺锡氧化铟薄膜(ITO)相比,不仅性能与其相似,还具有ITO很多无法比拟的优点.因此,制备ZnO基透明导电薄膜成为当今研究热点.综述了ZnO基透明导电薄膜制备方法的研究进展,并对各自的优缺点进行了讨论.Compared with the ITO thin film, ZnO- based transparent conductive thin film is not only similar to it in the performance, but also has the merits which are better than ITO. So the preparing of ZnO- based transparent conductive thin film becomes a hot topic. In this paper, a review on the progress of preparation methods of ZnO-based transparent conductive thin films is presented, and the advantages, disadvantages of deposition techniques are discussed in detail.

关 键 词：透明导电薄膜 ZNO 制备方法 电阻率 透射率 

分 类 号：TN304.055[电子电信—物理电子学]