Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids  

作　　者：林恭如 

机构地区：[1]Graduate Institute of Photonics and Optoelectronics Department of Electrical Engineering, National Taiwan University,Taipei 106

出　　处：《Chinese Optics Letters》2007年第11期671-673,共3页中国光学快报（英文版）

摘　　要：The interracial Si nano-pyralnid-enhanced electroluminescence （EL） of an ITO/SiOx/p-Si/Al metal-oxidesemiconductor （MOS） diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm^2, output power of 16 nW, and lifetime of 10 h is reported.The interracial Si nano-pyralnid-enhanced electroluminescence （EL） of an ITO/SiOx/p-Si/Al metal-oxidesemiconductor （MOS） diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm^2, output power of 16 nW, and lifetime of 10 h is reported.

关 键 词：Electric potential ELECTROLUMINESCENCE MOS devices NANOCRYSTALLITES Semiconducting silicon 

分 类 号：O482[理学—固体物理]